Carbon Nanotube Interconnects

A Thermal Model for Carbon Nanotube Interconnects

In this work, we have studied Joule heating in carbon nanotube based very large scale integration (VLSI) interconnects and incorporated Joule heating influenced scattering in our previously developed current transport model. The theoretical model explains breakdown in carbon nanotube resistance which limits the current density. We have also studied scattering parameters of carbon nanotube (CNT)...

Distortion of pulsed signals in carbon nanotube interconnects

This paper investigates the distortion of DC and radio frequency (RF) pulsed signals in carbon nanotube interconnects. A modified transmission line model for single-walled carbon nanotubes is employed for the simulation. Comparisons with the conventional AlCu interconnect are performed. r 2007 Elsevier Ltd. All rights reserved.

Stability analysis in multiwall carbon nanotube bundle interconnects

Based on the transmission line model (TLM), we present an exact and general transfer function formula, useful for both single multiwall carbon nanotube (MWCNT) and MWCNT bundle interconnects. Using the standard parameters for 22-nm technology node we perform the Nyquist stability analysis, to investigate the dependence of the degree of relative stability for both single and bundle interconnects...

Compact Modeling of Carbon Nanotube Transistor and Interconnects

Scaling and evaluation of carbon nanotube interconnects for VLSI applications

The work in this paper addresses the need to evaluate the impact of emerging interconnect technologies, such as carbon nanotubes (CNTs), in the context of system applications. The critical properties of CNTs are described in terms of equivalent material parameters such that a general methodology of interconnect sizing can be used. This methodology is used to rescale the interlayer dielectric (I...